TTB1020B |
Part Number | TTB1020B |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | Bipolar Transistors Silicon PNP Triple-Diffused Type TTB1020B TTB1020B 1. Applications • High-Current Switching • Hammer Drivers 2. Features (1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , ... |
Features |
(1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B
3. Packaging and Internal Circuit
TO-220SIS
1. Base 2. Collector 3. Emitter
©2015-2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2012-09
2020-01-29 Rev.4.0
TTB1020B
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector c... |
Document |
TTB1020B Data Sheet
PDF 207.04KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TTB1067B |
Toshiba |
Silicon PNP Transistors | |
2 | TTB0503-1T |
MORNSUN |
DC/DC Converter | |
3 | TTB0505-1T |
MORNSUN |
DC/DC Converter | |
4 | TTB0509-1T |
MORNSUN |
DC/DC Converter | |
5 | TTB50-3T |
American Accurate Components |
Termination - Tab & Cover (TTB Series) | |
6 | TTB6C135N16 |
eupec |
Phase Control Thyristor |