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WB10SC120AL |
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| Part Number | WB10SC120AL |
| Manufacturer | WeEn |
| Description | Silicon Carbide Schottky diode (Bare Die). 2. Features and benefits • Extremely fast reverse recovery time • Low figure of merit (Qr*VF) • Highly stable switching performance • Superior in efficiency ... |
| Features |
• Extremely fast reverse recovery time • Low figure of merit (Qr*VF) • Highly stable switching performance • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM* repetitive peak reverse voltage IF(AV)** average forward current δ = 0.5; square-wave pulse Static characteristics VF** forward voltage Dynamic characteristics IF = 10 A; Tj = 25 °C IF = 10 A; Tj = 150 °C Qr** recovered charge IF = 10 ... |
| Document |
 WB10SC120AL Data Sheet
PDF 248.32KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WB100FC120AL |
WeEn |
Hyperfast power diode |
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| 2 | WB1010 |
Coilcraft |
(WBxxxx) Wide Band RF Transformers |
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| 3 | WB1010-1 |
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| 4 | WB1015 |
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| 5 | WB1040 |
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| 6 | WB1-1L |
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Desde 2024. D4U Semiconductor.
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