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M3GB12012S |
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| Part Number | M3GB12012S |
| Manufacturer | Micross |
| Description | and Circuit Description Table 1 Ordering Information Reference IR Base Model M3GB12003R3S/CKA M3GB12003R3S/CKC M3GB12005S/CKA M3GB12005S/CKC M3GB12005S/CKRA M3GB12005S/CKRC M3GB12012S/CKA M3GB12012... |
| Features |
• Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si) • SEE Hardened to LET up to 82 MeV ·cm2/mg • Low Input and Output Noise • Low Weight < 100 grams • Magnetically Coupled Feedback • 95V to 140V DC Input Range • Up to 40W Output Power • Single and Dual Output Models Include 3.3, 5, 12, 15, ±5, ±12 and ±15V • High Efficiency - to 82% • -55°C to +125°C Operating Temperature Range • 100MΩ @ 500VDC Isolation • Under-Voltage Lockout • Short Circuit and Overload Protection • Remote Sense on Single Output Models • Adjustable Output Voltage for all Models • Synchronization Input and Output... |
| Document |
 M3GB12012S Data Sheet
PDF 814.31KB |
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Desde 2024. D4U Semiconductor.
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