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HCS10MS |
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| Part Number | HCS10MS |
| Manufacturer | Intersil |
| Description | The Intersil HCS10MS is a Radiation Hardened Triple 3Input NAND Gate. A high on all inputs forces the output to a Low state. The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed ope... |
| Features |
• 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse • Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ) • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min • Input Current Le... |
| Document |
 HCS10MS Data Sheet
PDF 384.21KB |
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Desde 2024. D4U Semiconductor.
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