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C3M0280090J |
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| Part Number | C3M0280090J |
| Manufacturer | Wolfspeed |
| Description | C3M0280090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain (TAB) Features • New C3M Silicon Carbide (SiC) MOSFET technology • High blocking voltag... |
| Features |
• New C3M Silicon Carbide (SiC) MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source 1 2 34 5 6 7 G KS S S S S S Part Number C3M0280090J Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package TO-263-7 Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wo... |
| Document |
 C3M0280090J Data Sheet
PDF 869.79KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C3M0280090D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 2 | C3M0280090D |
Cree |
Silicon Carbide Power MOSFET |
|
| 3 | C3M0280090J |
Cree |
Silicon Carbide Power MOSFET |
|
| 4 | C3M0015065D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 5 | C3M0015065K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 6 | C3M0016120D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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