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SCT025W120G3AG |
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| Part Number | SCT025W120G3AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over ... |
| Features |
Order code SCT025W120G3AG
VDS 1200 V
RDS(on) typ. 27 mΩ
ID 56 A
HiP247
3 2 1
D(2, TAB)
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV G(1) • On board charger (OBC) Description S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technolog... |
| Document |
 SCT025W120G3AG Data Sheet
PDF 489.01KB |
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Desde 2024. D4U Semiconductor.
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