XPN12006NC |
Part Number | XPN12006NC |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | MOSFETs Silicon N-channel MOS (U-MOS-H) XPN12006NC 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Small, thin pa... |
Features |
(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
XPN12006NC
TSON Advance(WF)
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2019-2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2019-12
2020-06-24 Rev.4.0
XPN12006NC
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
... |
Document |
XPN12006NC Data Sheet
PDF 560.33KB |
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