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NP36P06KDG |
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| Part Number | NP36P06KDG |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RD... |
| Features |
Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 37.5 m Max. ( VGS = -4.5 V, ID = -18 A ) Low input capacitance : Ciss = 3100 pF Typ. Designed for automotive application and AEC-Q101 qualified. Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 123 1. Gate 2. Drain 3. Source 4. Drain(Fin) MP-25ZK (TO-263) Absolute Maximum Ratings Gate Source Equivalent circuit Item Symbol Ratings Drain to Source Voltage (VGS = 0 V) VDSS -60 Gate to Source Voltage (VDS = 0 V) VGSS 20 Drain Current (DC) (Tc =... |
| Document |
 NP36P06KDG Data Sheet
PDF 1.31MB |
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Desde 2024. D4U Semiconductor.
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