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FDT1600N10ALZ |
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| Part Number | FDT1600N10ALZ |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance and maintain superior switching performance. Features • RDS(on)... |
| Features |
• RDS(on) = 121 mW (Typ.) @ VGS = 10 V, ID = 2.8 A • RDS(on) = 156 mW (Typ.) @ VGS = 5 V, ID = 1.8 A • Low Gate Charge (Typ. 2.9 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Protection Level: HBM > 5.2 kV, MM > 400 V, CDM > 1.5 kV • RoHS Compliant Applications • Consumer Appliances • LED TV and Monitor • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter DATA SHEET www.onsemi.com D S D G SOT−223 CASE 318H MARKING DIAGRAM AYW 10ALZG G 1 A = Assembly Location Y = Year W = Work Week 10ALZ = Specific... |
| Document |
 FDT1600N10ALZ Data Sheet
PDF 416.38KB |
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Desde 2024. D4U Semiconductor.
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