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FDS2672 |
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| Part Number | FDS2672 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This single N−Channel MOSFET is produced using onsemi’s advanced UItraFET Trench process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching perfo... |
| Features |
• Max rDS(on) = 70 mW at VGS = 10 V, ID = 3.9 A • Max rDS(on) = 80 mW at VGS = 6 V, ID = 3.5 A • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(on) • These Device is Pb−Free, Halide Free and are RoHS Compliant Applications • DC−DC Conversion ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed 200 V ±20 V 3.9 A 50 EAS Single Pulse Avalanche Energy (Note 3) 37.5 mJ PD Power Dissipation (Note 1a) (Note 1b) ... |
| Document |
 FDS2672 Data Sheet
PDF 301.73KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDS2670 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDS2672 |
Fairchild Semiconductor |
N-Channel UltraFET |
|
| 3 | FDS2070N3 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDS2070N7 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDS2170N3 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDS2170N7 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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