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FDN327N |
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| Part Number | FDN327N |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This 20 V N−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features • 2 A, 20 V ♦ RDS(on) = 70 mW @ VGS = 4.5 V ♦ RDS(on) = 80 ... |
| Features |
• 2 A, 20 V ♦ RDS(on) = 70 mW @ VGS = 4.5 V ♦ RDS(on) = 80 mW @ VGS = 2.5 V ♦ RDS(on) = 120 mW @ VGS = 1.8 V • Low Gate Charge (4.5 nC typical) • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(on) • This Device is Pb−Free and Halogen Free Applications • Load Switch • Battery Protection • Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 20 V VGSS Gate−Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) 2 A Drain Current – Pulsed 8 PD Power Dissipation for... |
| Document |
 FDN327N Data Sheet
PDF 289.91KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDN327N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDN302P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 3 | FDN302P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDN304P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 5 | FDN304P |
Kexin |
P-Channel MOSFET |
|
| 6 | FDN304P |
ON Semiconductor |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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