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FDG6316P |
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| Part Number | FDG6316P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • −0.7 A, −12 V ♦ RDS(ON) = 270 ... |
| Features |
• −0.7 A, −12 V ♦ RDS(ON) = 270 mW @ VGS = −4.5 V ♦ RDS(ON) = 360 mW @ VGS = −2.5 V ♦ RDS(ON) = 650 mW @ VGS = −1.8 V • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(ON) • Compact Industry Standard SC70−6 Surface Mount Package • These Devices are Pb−Free and are RoHS Compliant Applications • Battery Management • Load Switch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage −12 V VGSS Gate−Source Voltage ±8 V ID Drain Current Continuous −0.7 A (Note 1) Pulsed −1.8 PD Power Dissipat... |
| Document |
 FDG6316P Data Sheet
PDF 290.38KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG6316P |
Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET |
|
| 2 | FDG6313N |
Fairchild Semiconductor |
Dual N-Channel Digital FET |
|
| 3 | FDG6317NZ |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 4 | FDG6317NZ |
Fairchild Semiconductor |
Dual 20v N-Channel PowerTrench MOSFET |
|
| 5 | FDG6318P |
Fairchild Semiconductor |
Dual P-Channel/ Digital FET |
|
| 6 | FDG6318PZ |
Fairchild Semiconductor |
Dual P-Channel/ Digital FET |
|
Desde 2024. D4U Semiconductor.
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