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FDC3601N |
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| Part Number | FDC3601N |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These N−Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for ... |
| Features |
• 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V • Low Gate Charge (3.7 nC Typical) • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOTt−6 Package: Small Footprint 72% (Smaller than Standard SO−8); Low Profile (1 mm Thick) • This is a Pb−Free Device Applications • Load Switch • Battery Protection • Power Management ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 100 V VGSS Gate−Source Voltage ±20 V ID Drain Current − Continuous (Note 1a) 1.0 A... |
| Document |
 FDC3601N Data Sheet
PDF 328.55KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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