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FDC3535 |
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| Part Number | FDC3535 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling... |
| Features |
General Description
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package Fast switching speed 100% UIL Tested RoHS Compliant
This P-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
Load Switch Synchronous Rectifier
S D D
Pin 1
G D D
SuperSOTTM -6
S4 D5 D6
3G 2D ... |
| Document |
 FDC3535 Data Sheet
PDF 272.52KB |
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Desde 2024. D4U Semiconductor.
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