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FDME820NZT |
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| Part Number | FDME820NZT |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This Single N−Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 1.8 V on special MicroFETt leadframe. Features • Max RDS(ON) = 18 mW at VGS ... |
| Features |
• Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A • Max RDS(ON) = 24 mW at VGS = 2.5 V, ID = 7.5 A • Max RDS(ON) = 32 mW at VGS = 1.8 V, ID = 7 A • Low Profile – 0.55 mm maximum – in the New Package MicroFET 1.6x1.6 Thin • HBM ESD Protection Level > 2.5 kV (Note 3) • Free from Halogenated Compounds and Antimony Oxides • RoHS Compliant Applications • Li−lon Battery Pack • Baseband Switch • Load Switch • DC−DC Conversion MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage ±12 V ID Drain Cur... |
| Document |
 FDME820NZT Data Sheet
PDF 298.93KB |
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Desde 2024. D4U Semiconductor.
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