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FDMC86102LZ |
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| Part Number | FDMC86102LZ |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and ... |
| Features |
• Shielded Gate MOSFET Technology • Max RDS(on) = 24 mW at VGS = 10 V, ID = 6.5 A • Max RDS(on) = 35 mW at VGS = 4.5 V, ID = 5.5 A • HBM ESD Protection Level > 6 kV Typical (Note 4) • 100% UIL Tested • RoHS Compliant Applications • DC−DC Switching MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameter Ratings Unit VDS Drain−to−Source Voltage 100 V VGS Gate−to−Source Voltage ±20 V ID Drain Current A − Continuous TC = 25°C 22 − Continuous TA = 25°C 7 (Note 1a) − Pulsed 30 EAS Single Pulse Avalanche Energy (Note 3) 84 mJ PD Power Dissipation TC = 25°C 4... |
| Document |
 FDMC86102LZ Data Sheet
PDF 259.92KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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