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FDMC86102L |
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| Part Number | FDMC86102L |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain s... |
| Features |
• Shielded Gate MOSFET Technology • Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A • Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.5 A • Low Profile − 1 mm Max in Power 33 • Pb−Free, Halide Free and RoHS Compliant Applications • DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current: A Continuous, TC = 25°C 18 Continuous, TA = 25°C (Note 1a) 7 Pulsed 30 EAS Single Pulse Avalanche Energy (Note 3) 63 mJ PD TJ, TSTG Power Dissipation: TC = 25°C TA = 2... |
| Document |
 FDMC86102L Data Sheet
PDF 306.37KB |
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Desde 2024. D4U Semiconductor.
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