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FDMC86102 |
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| Part Number | FDMC86102 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain s... |
| Features |
• Shielded Gate MOSFET Technology • Max RDS(on) = 24 mW at VGS = 10 V, ID = 7A • Max RDS(on) = 38 mW at VGS = 6 V, ID = 5 A • Low Profile − 1 mm max in Power 33 • 100% UIL Tested • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous TC = 25°C 100 V ±20 V A 20 − Continuous TA = 25°C (Note 1a) 7 − Pulsed (Note 4) 60 EAS Single Pulse Avalanche Energy (Note 3) 72 mJ PD Power... |
| Document |
 FDMC86102 Data Sheet
PDF 433.31KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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