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160N4F7 |
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| Part Number | 160N4F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reduc... |
| Features |
Order code
V DS
RDS(on) max
STL160N4F7
40 V
2.5 mΩ
• Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 120 A D(5, 6, 7, 8) 8 76 5 Applications • Switching applications G(4) Description S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status STL160N4F7 ... |
| Document |
 160N4F7 Data Sheet
PDF 856.38KB |
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