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8DN6LF6 |
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| Part Number | 8DN6LF6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Produc... |
| Features |
Order code
VDS
RDS(on) max.
ID
4 1
STS8DN6LF6AG
60 V
24 mΩ
8A
SO-8
D1(7, 8)
D2(5, 6)
• AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level G1(2) G2(4) Applications • Switching applications PTOT 3.2 W S1(1) S2(3) SC12820 Description This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS8DN6LF6AG Product summary Order code STS8DN6... |
| Document |
 8DN6LF6 Data Sheet
PDF 311.06KB |
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