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2N7002PV |
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| Part Number | 2N7002PV |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-le... |
| Features |
• Logic-level compatible • Very fast switching • Trench MOSFET technology 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tamb = 25 °C [1] Static characteristics (per transistor) RDSon drain-source on-state VGS = 10 V; ID = 500 mA; pulsed; tp ≤ resistance 300 µs; δ ≤ 0.01; Tj = 25 °C Min Typ Max - - 60 -20 - 20 - - 350 - 1 1.6 ... |
| Document |
 2N7002PV Data Sheet
PDF 267.15KB |
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