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STG200G65FD8AG |
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| Part Number | STG200G65FD8AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system pe... |
| Features |
G E
EGCD
Product status link STG200G65FD8AG
• AEC-Q101 qualified • Low-loss series IGBT • Low VCE(sat) = 1.52 V (typ.) at IC = 200 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C Applications • EV/HEV traction inverters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is ... |
| Document |
 STG200G65FD8AG Data Sheet
PDF 500.45KB |
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Desde 2024. D4U Semiconductor.
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