FDN360P |
Part Number | FDN360P |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | This P−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for sup... |
Features |
• −2 A, −30 V ♦ RDS(ON) = 80 mW @ VGS = −10 V ♦ RDS(ON) = 125 mW @ VGS = −4.5 V • Low Gate Charge (6.2 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) • High Power Version of Industry Standard SOT−23 Package. Identical Pin−Out to SOT−23 with 30% Higher Power Handling Capability • These Devices are Pb−Free and are RoHS Compliant SOT−23 CASE 527AG D G S MARKING DIAGRAM 360MG G 360 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter ... |
Document |
FDN360P Data Sheet
PDF 281.29KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDN360P |
Fairchild Semiconductor |
single P-Channel MOSFET | |
2 | FDN361AN |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDN361BN |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDN302P |
Fairchild Semiconductor |
P-Channel MOSFET | |
5 | FDN302P |
ON Semiconductor |
P-Channel MOSFET | |
6 | FDN304P |
Fairchild Semiconductor |
P-Channel MOSFET |