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FDC604P |
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| Part Number | FDC604P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P−Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = ... |
| Features |
• −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = −4.5 V RDS(ON) = 43 mW @ VGS = −2.5 V RDS(ON) = 60 mW @ VGS = −1.8 V • Fast switching speed • High Performance Trench Technology for Extremely Low RDS(ON) • These Device is Pb−Free and Halogen Free Applications • Battery Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±8 V ID Drain Current − Continuous − Pulsed (Note 1a) −5.5 A −20 PD Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0... |
| Document |
 FDC604P Data Sheet
PDF 331.41KB |
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Desde 2024. D4U Semiconductor.
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