CNY17 |
Part Number | CNY17 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package. Features High BVCEO: 70 V Minimum (CN... |
Features |
High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) Closely Matched Current Transfer Ratio (CTR) Minimizes Unit−to−Unit Variation Current Transfer Ratio In Select Groups Very Low Coupled Capacitance Along With No Chip−to−Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M) Safety and Regulatory Approvals: UL1577, 4,170 VACRMS for 1 Minute DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage Applications Power Supply Regulators Digital Logic Inputs Microprocessor Inputs Appliance Sensor Systems Industrial Controls DATA SHEET www.onsemi.co... |
Document |
CNY17 Data Sheet
PDF 367.63KB |
Similar Datasheet
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