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IGI60F2020A1L |
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| Part Number | IGI60F2020A1L |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IGI60F2020A1L combines a half-bridge power stage consisting of two 200 m (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package. In the lo... |
| Features |
• Two 200 m GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers - Source / sink driving current up to 1 / 2 A - Application-configurable turn-on and turn-off speed • Fast input-to-output propagation (typ. 47 ns) with extremely small channel-tochannel mismatch • PWM input signal (switching frequency up to 3 MHz) • Standard logic input levels compatible with digital controllers • Wide supply range • Single gate driver supply voltage possible (typ. 8 V) with fast UVLO recovery • Low-side open source for current sensing with external shunt resistor • ... |
| Document |
 IGI60F2020A1L Data Sheet
PDF 1.24MB |
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Desde 2024. D4U Semiconductor.
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