STW65N045M9-4 |
Part Number | STW65N045M9-4 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 tec... |
Features |
Gate(4) Driver
source(3)
2 34 1 TO247-4 Drain(1, TAB)
Power source(2)
ND1TPS2DS3G4
Order code
VDS
RDS(on) max.
ID
STW65N045M9-4
650 V
45 mΩ
54 A
• Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance thanks to the extra driving source pin • Easy to drive • 100% avalanche tested Applications • High efficiency switching applications Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring... |
Document |
STW65N045M9-4 Data Sheet
PDF 351.44KB |
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