STW65N023M9-4 STMicroelectronics N-channel Power MOSFET Datasheet. existencias, precio

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STW65N023M9-4

STMicroelectronics
STW65N023M9-4
STW65N023M9-4 STW65N023M9-4
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Part Number STW65N023M9-4
Manufacturer STMicroelectronics (https://www.st.com/)
Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 tech...
Features Order code VDS RDS(on) max. ID STW65N023M9-4 650 V 23.0 mΩ 92
• Worldwide best FOM RDS(on)*Qg among silicon-based devices
• Higher VDSS rating
• Higher dv/dt capability
• Excellent switching performance thanks to the extra driving source pin
• Easy to drive
• 100% avalanche tested Gate(4) Driver source(3) Applications
• High efficiency switching applications Power source(2) ND1TPS2DS3G4 Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silico...

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