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STB8NM60T4 |
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| Part Number | STB8NM60T4 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | G(1) S(3) AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMES... |
| Features |
Order code
VDS
RDS(on) max.
ID
STB8NM60T4
600 V
1.0 Ω
8A
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description G(1) S(3) AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low onresistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary strip technique, this Power M... |
| Document |
 STB8NM60T4 Data Sheet
PDF 622.96KB |
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