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SCT025W120G3-4AG |
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| Part Number | SCT025W120G3-4AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature... |
| Features |
Order code SCT025W120G3-4AG
VDS 1200 V
RDS(on) typ. 27 mΩ
ID 56 A
HiP247-4
2 34 1
Drain(1, TAB)
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Gate(4) Driver source(3) Applications Power source(2) ND1TPS2DS3G4 • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been... |
| Document |
 SCT025W120G3-4AG Data Sheet
PDF 504.11KB |
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Desde 2024. D4U Semiconductor.
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