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SCTWA40N120G2V-4 |
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| Part Number | SCTWA40N120G2V-4 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code
VDS
RDS(on) max.
ID
SCTWA40N120G2V-4
1200 V
100 mΩ
36 A
• Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Switching mode power supply • DC-DC converters • Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good swi... |
| Document |
 SCTWA40N120G2V-4 Data Sheet
PDF 197.61KB |
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Desde 2024. D4U Semiconductor.
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