Busque con el número de pieza junto con el fabricante o la descripción
SCTW35N65G2V |
Click to view a larger image
| Part Number | SCTW35N65G2V |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code
VDS
RDS(on) max.
ID
SCTW35N65G2V
650 V
67 mΩ
45 A
• Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200°C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss i... |
| Document |
 SCTW35N65G2V Data Sheet
PDF 200.35KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SCTW35N65G2VAG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
| 2 | SCTW100N120G2AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
| 3 | SCTW100N65G2AG |
STMicroelectronics |
silicon carbide Power MOSFET |
|
| 4 | SCTW40N120G2V |
STMicroelectronics |
Silicon carbide Power MOSFET |
|
| 5 | SCTW40N120G2VAG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
| 6 | SCTW60N120G2 |
STMicroelectronics |
Silicon carbide Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|