Busque con el número de pieza junto con el fabricante o la descripción
STGST200G65DFAG |
Click to view a larger image
| Part Number | STGST200G65DFAG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter syste... |
| Features |
1
4
23
32
1
STPAK
C(4)
G(3)
E(1, 2)
NG3C4E12
• AEC-Q101 qualified • VCE(sat) = 1.52 V (typ.) @ IC = 200 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Low thermal resistance • Very fast and soft recovery antiparallel diode Applications • EV Inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and tig... |
| Document |
 STGST200G65DFAG Data Sheet
PDF 366.75KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STGSB200M65DF2AG |
STMicroelectronics |
IGBT |
|
| 2 | STGSH80HB65DAG |
STMicroelectronics |
IGBT |
|
| 3 | STG1 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STG1218 |
STMicroelectronics |
a quad channel analog switch |
|
| 5 | STG15M120F3D7 |
STMicroelectronics |
IGBT |
|
| 6 | STG15M120F3D8 |
STMicroelectronics |
IGBT |
|
Desde 2024. D4U Semiconductor.
|