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STPSC10065DLF |
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| Part Number | STPSC10065DLF |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode st... |
| Features |
• Less than 1 mm height package • High creepage package • No or negligible reverse recovery • Temperature independent switching behavior • High forward surge capability • Very low drop forward voltage • Power efficient product • ECOPACK2 compliant component Applications • Boost PFC • Bootstrap diode • LLC clamping function • High frequency inverter applications Description This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rat... |
| Document |
 STPSC10065DLF Data Sheet
PDF 372.85KB |
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