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STPSC10H12G2Y-TR |
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| Part Number | STPSC10H12G2Y-TR |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode st... |
| Features |
• AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • Low VF • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant Applications • On board charger (OBC) • DC/DC • PFC Description This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky cons... |
| Document |
 STPSC10H12G2Y-TR Data Sheet
PDF 372.40KB |
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