SCTW100N120G2AG |
Part Number | SCTW100N120G2AG |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
Features |
Order code SCTW100N120G2AG
VDS 1200 V
RDS(on)typ. 30 mΩ
ID 75 A
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
• AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating junction temperature capability (TJ = 200 °C) Applications • Traction for inverters • DC-DC converters • Solar inverters • OBC AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area an... |
Document |
SCTW100N120G2AG Data Sheet
PDF 212.57KB |
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