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SCT012H90G3AG |
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| Part Number | SCT012H90G3AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature ... |
| Features |
Order code SCT012H90G3AG
VDS 900 V
RDS(on) typ. 12 mΩ
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency ID 110 A Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The d... |
| Document |
 SCT012H90G3AG Data Sheet
PDF 385.75KB |
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Desde 2024. D4U Semiconductor.
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