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SCTW35N65G2VAG |
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| Part Number | SCTW35N65G2VAG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code SCTW35N65G2VAG
VDS 650 V
RDS(on) typ. 55 mΩ
ID 45 A
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
• AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitance Applications • Switching mode power supply • EV chargers • DC-DC converters AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperatu... |
| Document |
 SCTW35N65G2VAG Data Sheet
PDF 201.38KB |
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Desde 2024. D4U Semiconductor.
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