SCTWA35N65G2VAG |
Part Number | SCTWA35N65G2VAG |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
Features |
Order code SCTWA35N65G2VAG
VDS 650 V
RDS(on) typ. 55 mΩ
ID 45 A
HiP247 long leads
• AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitance D(2, TAB) G(1) S(3) Applications • Switching mode power supply • EV chargers • DC-DC converters AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction tem... |
Document |
SCTWA35N65G2VAG Data Sheet
PDF 238.88KB |
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