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STH12N120K5-2AG |
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| Part Number | STH12N120K5-2AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultr... |
| Features |
Order code
VDS
RDS(on) max.
ID
STH12N120K5-2AG
1200 V
1.9 Ω
7A
• AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested G(1) S(2, 3) Applications • Switching applications DTG1S23NZ Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status li... |
| Document |
 STH12N120K5-2AG Data Sheet
PDF 400.30KB |
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Desde 2024. D4U Semiconductor.
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