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STP30N65DM6AG |
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| Part Number | STP30N65DM6AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery t... |
| Features |
Order code STP30N65DM6AG
VDS 650 V
RDS(on) max. 115 mΩ
ID 28 A
• AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area wit... |
| Document |
 STP30N65DM6AG Data Sheet
PDF 231.21KB |
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Desde 2024. D4U Semiconductor.
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