STLD257N4F7AG |
Part Number | STLD257N4F7AG |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate char... |
Features |
Order code STLD257N4F7AG
VDS 40 V
RDS(on) max. 1.1 mΩ
ID 120 A
D(5, 6, 7, 8)
• AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package G(4) Applications • Switching applications S(1, 2, 3) AM15540v4 Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Pro... |
Document |
STLD257N4F7AG Data Sheet
PDF 1.89MB |
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