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SCTWA35N65G2V4AG |
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| Part Number | SCTWA35N65G2V4AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code SCTWA35N65G2V4AG
VDS 650 V
RDS(on) max. 67 mΩ
ID 45 A
HiP247-4
2 34 1
Drain(1, TAB)
• AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitances • Source sensing pin for increased efficiency • Very high operating junction temperature capability (TJ = 200 °C) Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4 Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technol... |
| Document |
 SCTWA35N65G2V4AG Data Sheet
PDF 193.65KB |
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Desde 2024. D4U Semiconductor.
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