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SCT040HU65G3AG |
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| Part Number | SCT040HU65G3AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature ... |
| Features |
Order code SCT040HU65G3AG
VDS 650 V
RDS(on) typ. 40 mΩ
ID 30 A
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined wit... |
| Document |
 SCT040HU65G3AG Data Sheet
PDF 646.60KB |
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Desde 2024. D4U Semiconductor.
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