HUFA76407DK8T-F085 |
Part Number | HUFA76407DK8T-F085 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V Ultra-Low On-Resistance rDS(on)... |
Features |
General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process
Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is Peak Current vs Pulse Width Curve capable of withstanding high energy UIS Rating Curve in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in Transient T... |
Document |
HUFA76407DK8T-F085 Data Sheet
PDF 912.26KB |
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