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IRFR220B |
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| Part Number | IRFR220B |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 10 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability D D ! GS D-PAK IRFR Series GDS I-PAK IRFU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy... |
| Document |
 IRFR220B Data Sheet
PDF 536.65KB |
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Desde 2024. D4U Semiconductor.
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