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MMBFJ110 |
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| Part Number | MMBFJ110 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | N-Channel JFET MMBFJ110 Features • This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory • Sourced from Process 58 • This is a Pb−Free Device MAXIMUM ... |
| Features |
• This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory • Sourced from Process 58 • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symbol Parameter Value Unit VDG Drain−Gate Voltage 25 V VGS Gate−Source Voltage −25 V IGF Forward Gate Current 10 mA TJ Junction Temperature 150 °C TJ, TSTG Storage Temperature Range −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be as... |
| Document |
 MMBFJ110 Data Sheet
PDF 327.41KB |
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