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IXBF55N300 |
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| Part Number | IXBF55N300 |
| Manufacturer | IXYS |
| Description | High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = IC110 = VCE(sat) 3000V 34A 3.2V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES ... |
| Features |
Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages Low Gate Drive Requirement High Power Density Applications Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches © 2021 Littelfuse, Inc. DS100205C(7/21) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. g I = 55A, V = 10V, Note 1 32 50 S ... |
| Document |
 IXBF55N300 Data Sheet
PDF 1.54MB |
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Desde 2024. D4U Semiconductor.
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