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MTD9N10E |
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| Part Number | MTD9N10E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTD9N10E Preferred Device Power MOSFET 9 Amps, 100 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient... |
| Features |
itive (tp ≤ 10 ms)
Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs)
Total Power Dissipation Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size
VDSS VDGR
VGS VGSM
ID ID IDM PD
100
100
± 20 ± 30
9.0 5.0 27
40 0.32 1.75
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
Single Pulse Drain−to−Source Avalanche
EAS
40
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 9.0 Apk, L = 1.0 mH, RG = 25 Ω)
Thermal Resistance
− Junction to Case − Junction to Ambient − Junc... |
| Document |
 MTD9N10E Data Sheet
PDF 245.38KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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