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CSD16327Q3 |
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| Part Number | CSD16327Q3 |
| Manufacturer | Texas Instruments (https://www.ti.com/) |
| Description | This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. Top View S1 8D S2 7D S3 D G4 6... |
| Features |
•1 Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems • Optimized for Control or Synchronous FET Applications Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 25 6.2 1.1 VGS = 3 V ... |
| Document |
 CSD16327Q3 Data Sheet
PDF 449.80KB |
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Desde 2024. D4U Semiconductor.
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